Ultra-high speed CMOS circuits in thin SIMOX films

Avid Kamgar; S. J. Hillenius; H. I. Cong; R. L. Field; W. S. Lindenberger; G. K. Celler; L. E. Trimble; J. C. Sturm

Ultra-high speed CMOS circuits in thin SIMOX films

Avid Kamgar
, S. J. Hillenius
, H. I. Cong
, R. L. Field
, W. S. Lindenberger
, G. K. Celler
, L. E. Trimble
, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

Abstract

CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

Original language	English (US)
Pages (from-to)	829-832
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1989
Externally published	Yes
Event	1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA Duration: Dec 3 1989 → Dec 6 1989

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

@article{95690839ff6b452ea6904ddbb45aa455,

title = "Ultra-high speed CMOS circuits in thin SIMOX films",

abstract = "CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50\% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.",

author = "Avid Kamgar and Hillenius, \{S. J.\} and Cong, \{H. I.\} and Field, \{R. L.\} and Lindenberger, \{W. S.\} and Celler, \{G. K.\} and Trimble, \{L. E.\} and Sturm, \{J. C.\}",

year = "1989",

language = "English (US)",

pages = "829--832",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1989 International Electron Devices Meeting - Technical Digest ; Conference date: 03-12-1989 Through 06-12-1989",

}

TY - JOUR

T1 - Ultra-high speed CMOS circuits in thin SIMOX films

AU - Kamgar, Avid

AU - Hillenius, S. J.

AU - Cong, H. I.

AU - Field, R. L.

AU - Lindenberger, W. S.

AU - Celler, G. K.

AU - Trimble, L. E.

AU - Sturm, J. C.

PY - 1989

Y1 - 1989

N2 - CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

AB - CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

UR - https://www.scopus.com/pages/publications/0024870507

UR - https://www.scopus.com/pages/publications/0024870507#tab=citedBy

M3 - Conference article

AN - SCOPUS:0024870507

SN - 0163-1918

SP - 829

EP - 832

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1989 International Electron Devices Meeting - Technical Digest

Y2 - 3 December 1989 through 6 December 1989

ER -

Ultra-high speed CMOS circuits in thin SIMOX films

Abstract

All Science Journal Classification (ASJC) codes

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