Ultra-high speed CMOS circuits in thin SIMOX films

Avid Kamgar; S. J. Hillenius; H. I. Cong; R. L. Field; W. S. Lindenberger; G. K. Celler; L. E. Trimble; J. C. Sturm

Ultra-high speed CMOS circuits in thin SIMOX films

Avid Kamgar, S. J. Hillenius, H. I. Cong, R. L. Field, W. S. Lindenberger, G. K. Celler, L. E. Trimble, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

Abstract

CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

Original language	English (US)
Pages (from-to)	829-832
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1989
Externally published	Yes
Event	1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA Duration: Dec 3 1989 → Dec 6 1989

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Ultra-high speed CMOS circuits in thin SIMOX films",

abstract = "CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.",

author = "Avid Kamgar and Hillenius, {S. J.} and Cong, {H. I.} and Field, {R. L.} and Lindenberger, {W. S.} and Celler, {G. K.} and Trimble, {L. E.} and Sturm, {J. C.}",

year = "1989",

language = "English (US)",

pages = "829--832",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "1989 International Electron Devices Meeting - Technical Digest ; Conference date: 03-12-1989 Through 06-12-1989",

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TY - JOUR

T1 - Ultra-high speed CMOS circuits in thin SIMOX films

AU - Kamgar, Avid

AU - Hillenius, S. J.

AU - Cong, H. I.

AU - Field, R. L.

AU - Lindenberger, W. S.

AU - Celler, G. K.

AU - Trimble, L. E.

AU - Sturm, J. C.

PY - 1989

Y1 - 1989

N2 - CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

AB - CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

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UR - http://www.scopus.com/inward/citedby.url?scp=0024870507&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0024870507

SN - 0163-1918

SP - 829

EP - 832

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1989 International Electron Devices Meeting - Technical Digest

Y2 - 3 December 1989 through 6 December 1989

ER -

Ultra-high speed CMOS circuits in thin SIMOX films

Abstract

All Science Journal Classification (ASJC) codes

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