Ultra-high speed CMOS circuits in thin SIMOX films

Avid Kamgar, S. J. Hillenius, H. I. Cong, R. L. Field, W. S. Lindenberger, G. K. Celler, L. E. Trimble, J. C. Sturm

Research output: Contribution to journalConference article

11 Scopus citations

Abstract

CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.

Original languageEnglish (US)
Pages (from-to)829-832
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1989
Externally publishedYes
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: Dec 3 1989Dec 6 1989

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Ultra-high speed CMOS circuits in thin SIMOX films'. Together they form a unique fingerprint.

  • Cite this

    Kamgar, A., Hillenius, S. J., Cong, H. I., Field, R. L., Lindenberger, W. S., Celler, G. K., Trimble, L. E., & Sturm, J. C. (1989). Ultra-high speed CMOS circuits in thin SIMOX films. Technical Digest - International Electron Devices Meeting, 829-832.