Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system

S. Das Sarma, M. P. Lilly, E. H. Hwang, L. N. Pfeiffer, K. W. West, J. L. Reno

Research output: Contribution to journalArticlepeer-review

118 Scopus citations

Abstract

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high-mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this 2D electron system is a density inhomogeneity driven percolation transition due to the breakdown of screening in the random charged impurity disorder background. In particular, our measured conductivity exponent of ∼ 1.4 approaches the 2D percolation exponent value of 4/3 at low temperatures and our experimental data are inconsistent with there being a zero-temperature quantum critical point in our system.

Original languageEnglish (US)
Article number136401
JournalPhysical review letters
Volume94
Issue number13
DOIs
StatePublished - Apr 8 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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