Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum well

Physics

• Magnetoresistance 100%
• Quantum Wells 100%
• Heterojunctions 50%
• Magnetoresistivity 50%
• Temperature Dependence 50%
• Metal Oxide Semiconductor 50%
• Spin Polarization 50%
• Field Effect Transistor 50%

Material Science

• Density 100%
• Magnetoresistance 100%
• Quantum Well 100%
• Heterojunction 16%
• Electrical Resistivity 16%
• Metal-Oxide-Semiconductor Field-Effect Transistor 16%
• Spin Polarization 16%

Keyphrases

• Thermal Coefficient 50%