Two-dimensional holes in GaAs Higfets: Fabrication methods and transport measurements

Jian Huang, D. S. Novikov, D. C. Tsui, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We present a fabrication process and results of transport measurements of a number of p-channel heterojunction-insulated-gate field-effect transistors (HIGFETs). Without intentional doping in HIGFETs, the disorder is likely to be less than that in the modulation-doped samples. We established a process that eliminates the well-known gate leakage problem. The hole density in our devices can be continuously tuned down to a record low value of 7 × 10 8cm-2. Remarkably, such a dilute system (with Fermi wavelength approaching 1 μm) exhibits a non-activated conductivity that grows with temperature approximately as a power law at sufficiently low temperatures. We contrast it with the activated transport found in more disordered samples and discuss possible transport mechanisms in this strongly-interacting regime.

Original languageEnglish (US)
Pages (from-to)1219-1227
Number of pages9
JournalInternational Journal of Modern Physics B
Issue number8-9
StatePublished - Apr 10 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics


  • Field-effect transistor
  • Metal-insulator transition
  • Strongly correlated electrons
  • Two-dimensional transport


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