Two-dimensional electrons occupying multiple valleys in AlAs

M. Shayegan, E. P. De Poortere, O. Gunawan, Y. P. Shkolnikov, E. Tutuc, K. Vakili

Research output: Contribution to journalReview article

89 Scopus citations

Abstract

Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X-points of the Brillouin zone. These valleys have large effective mass andg-factor compared to the standard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.

Original languageEnglish (US)
Pages (from-to)3629-3642
Number of pages14
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number14
DOIs
StatePublished - Nov 1 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Shayegan, M., De Poortere, E. P., Gunawan, O., Shkolnikov, Y. P., Tutuc, E., & Vakili, K. (2006). Two-dimensional electrons occupying multiple valleys in AlAs. Physica Status Solidi (B) Basic Research, 243(14), 3629-3642. https://doi.org/10.1002/pssb.200642212