Abstract
We report on the growth of modulation-doped GaAs/AlxGa 1-x As heterostructures with extremely low disorder by molecular beam epitaxy. In growing these structures we employed the atomic plane doping technique and ultrathick (>1000 Å) spacer layers with graded composition. The structures have mobilities (μ) on the order of 1×106 cm2/V s (at 4.2 K) for areal densities (n s) as low as 4×1010 cm- 2. Quantum transport measurements in these structures exhibit new fractional quantum Hall states and demonstrate their exceptionally high quality.
Original language | English (US) |
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Pages (from-to) | 2080-2082 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 53 |
Issue number | 21 |
DOIs | |
State | Published - 1988 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)