Two-dimensional electron system with extremely low disorder

Mansour Shayegan, V. J. Goldman, M. Santos, T. Sajoto, L. Engel, D. C. Tsui

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Abstract

We report on the growth of modulation-doped GaAs/AlxGa 1-x As heterostructures with extremely low disorder by molecular beam epitaxy. In growing these structures we employed the atomic plane doping technique and ultrathick (>1000 Å) spacer layers with graded composition. The structures have mobilities (μ) on the order of 1×106 cm2/V s (at 4.2 K) for areal densities (n s) as low as 4×1010 cm- 2. Quantum transport measurements in these structures exhibit new fractional quantum Hall states and demonstrate their exceptionally high quality.

Original languageEnglish (US)
Pages (from-to)2080-2082
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number21
DOIs
StatePublished - Dec 1 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Shayegan, M., Goldman, V. J., Santos, M., Sajoto, T., Engel, L., & Tsui, D. C. (1988). Two-dimensional electron system with extremely low disorder. Applied Physics Letters, 53(21), 2080-2082. https://doi.org/10.1063/1.100306