Two-dimensional electron system with extremely low disorder

M. Shayegan, V. J. Goldman, M. Santos, T. Sajoto, L. Engel, D. C. Tsui

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


We report on the growth of modulation-doped GaAs/AlxGa 1-x As heterostructures with extremely low disorder by molecular beam epitaxy. In growing these structures we employed the atomic plane doping technique and ultrathick (>1000 Å) spacer layers with graded composition. The structures have mobilities (μ) on the order of 1×106 cm2/V s (at 4.2 K) for areal densities (n s) as low as 4×1010 cm- 2. Quantum transport measurements in these structures exhibit new fractional quantum Hall states and demonstrate their exceptionally high quality.

Original languageEnglish (US)
Pages (from-to)2080-2082
Number of pages3
JournalApplied Physics Letters
Issue number21
StatePublished - 1988

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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