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Tunneling properties oAs and AlAs barriers studied by ballistic electron luminescence spectroscopy
M. Petrov, S. Parihar,
S. Lyon
Electrical and Computer Engineering
Princeton Materials Institute
Research output
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Contribution to journal
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Article
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peer-review
9
Scopus citations
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Keyphrases
Tunneling
100%
Ballistic Electrons
100%
Photoluminescence Spectroscopy
100%
Tunneling Property
100%
Hole Tunneling
100%
Gallium Arsenide
50%
Luminescence
50%
Conduction Band
50%
Electron Tunneling
50%
Electron Current
50%
X-point
50%
Energy Distribution
50%
Tunneling Current
50%
Simple Theory
50%
Physics
Conduction Band
100%
Energy Distribution
100%
Electron Tunneling
100%
Engineering
Tunnel Construction
100%
Energy Engineering
16%
Good Agreement
16%
Gallium Arsenide
16%
Assuming
16%
Conduction Band
16%
Energy Distribution
16%
Chemistry
Luminescence Spectroscopy
100%
Conduction Band
50%
Tunneling Current
50%
Material Science
Luminescence
100%
Gallium Arsenide
33%