Tunneling into ferromagnetic quantum hall states: Observation of a spin bottleneck

H. B. Chan, R. C. Ashoori, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2D electron system. For most noninteger filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (ν= 1,3, and 1/3) tunneling occurs at two distinct rates that differ by up to 2 orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons. 1999

Original languageEnglish (US)
Pages (from-to)3258-3261
Number of pages4
JournalPhysical review letters
Issue number16
StatePublished - Oct 18 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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