Tunneling between two quantum Hall droplets

Inseok Yang, Woowon Kang, Loren Pfeiffer, Kirk Baldwin, Ken West

Research output: Contribution to journalArticlepeer-review


We report on tunneling experiment between two quantum Hall droplets separated by a nearly ideal tunnel barrier. The device is produced by cleaved edge overgrowth that laterally juxtaposes two two-dimensional electron systems across a high quality semiconductor barrier. The dramatic evolution of the tunneling characteristics is consistent with the magnetic field-dependent tunneling between the coupled edge states of the quantum Hall droplets. We identify a series of quantum critical points between successive strong and weak tunneling regimes that are reminiscent of the plateau-transitions in quantum Hall effect. Scaling analysis shows that the conductance near the critical magnetic fields Bc is a function of a single scaling argument |B - Bc|T, where the exponent κ = 0.42. This puzzling resemblance to a quantum Hall-insulator transition points to the significance of interedge correlation in the lateral tunneling of quantum Hall droplets.

Original languageEnglish (US)
Pages (from-to)3513-3520
Number of pages8
JournalInternational Journal of Modern Physics B
Issue number27-29
StatePublished - Nov 30 2004
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Condensed Matter Physics


  • Edge states
  • Integer quantum Hall effect
  • Quantum phase transition
  • Tunneling


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