Tunneling between dilute GaAs hole layers

S. Misra, N. C. Bishop, E. Tutuc, M. Shayegan

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak amplitude is much larger than expected from the available hole band parameters. Data as a function of parallel magnetic field reveal additional anomalous features, including a recurrence of a zero-bias tunneling peak at very large fields. In a perpendicular magnetic field, we observe a robust and narrow tunneling peak at total filling factor νT =1, signaling the formation of a bilayer quantum Hall ferromagnet.

Original languageEnglish (US)
Article number161301
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
StatePublished - Apr 2 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Tunneling between dilute GaAs hole layers'. Together they form a unique fingerprint.

Cite this