Tunneling at νt=1 in quantum Hall bilayers

D. Nandi, T. Khaire, A. D.K. Finck, J. P. Eisenstein, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Interlayer tunneling measurements in the strongly correlated bilayer quantized Hall phase at νT=1 are reported. The maximum, or critical, current for tunneling at νT=1 is shown to be a well-defined global property of the coherent phase, insensitive to extrinsic circuit effects and the precise configuration used to measure it, but also exhibiting a surprising scaling behavior with temperature. Comparisons between the experimentally observed tunneling characteristics and a recent theory are favorable at high temperatures, but not at low temperatures where the tunneling closely resembles the dc Josephson effect. The zero-bias tunneling resistance becomes extremely small at low temperatures, vastly less than that observed at zero magnetic field, but nonetheless remains finite. The temperature dependence of this tunneling resistance is similar to that of the ordinary in-plane resistivity of the quantum Hall phase.

Original languageEnglish (US)
Article number165308
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume88
Issue number16
DOIs
StatePublished - Oct 16 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Tunneling at νt=1 in quantum Hall bilayers'. Together they form a unique fingerprint.

Cite this