Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating

Junhong Na, Alexander Hoyer, Leslie Schoop, Daniel Weber, Bettina V. Lotsch, Marko Burghard, Klaus Kern

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


The semimetallic, two-dimensional layered transition metal dichalcogenide WTe2 has raised considerable interest due to its huge, non-saturating magnetoresistance. While for the origin of this effect, a close-to-ideal balance of electrons and holes has been put forward, the carrier concentration dependence of the magnetoresistance remains to be clarified. Here, we present a detailed study of the magnetotransport behaviour of ultrathin, mechanically exfoliated WTe2 sheets as a function of electrostatic back gating. The carrier concentration and mobility, determined using the two band model and analysis of the Shubnikov-de Haas oscillations, indicate enhanced surface scattering for the thinnest sheets. By the back gate action, the magnetoresistance could be tuned by up to ∼100% for a ∼13 nm-thick WTe2 sheet.

Original languageEnglish (US)
Pages (from-to)18703-18709
Number of pages7
Issue number44
StatePublished - Nov 28 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science


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