Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating

Junhong Na, Alexander Hoyer, Leslie Schoop, Daniel Weber, Bettina V. Lotsch, Marko Burghard, Klaus Kern

Research output: Contribution to journalArticle

12 Scopus citations


The semimetallic, two-dimensional layered transition metal dichalcogenide WTe2 has raised considerable interest due to its huge, non-saturating magnetoresistance. While for the origin of this effect, a close-to-ideal balance of electrons and holes has been put forward, the carrier concentration dependence of the magnetoresistance remains to be clarified. Here, we present a detailed study of the magnetotransport behaviour of ultrathin, mechanically exfoliated WTe2 sheets as a function of electrostatic back gating. The carrier concentration and mobility, determined using the two band model and analysis of the Shubnikov-de Haas oscillations, indicate enhanced surface scattering for the thinnest sheets. By the back gate action, the magnetoresistance could be tuned by up to ∼100% for a ∼13 nm-thick WTe2 sheet.

Original languageEnglish (US)
Pages (from-to)18703-18709
Number of pages7
Issue number44
StatePublished - Nov 28 2016
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Tuning the magnetoresistance of ultrathin WTe<sub>2</sub> sheets by electrostatic gating'. Together they form a unique fingerprint.

  • Cite this

    Na, J., Hoyer, A., Schoop, L., Weber, D., Lotsch, B. V., Burghard, M., & Kern, K. (2016). Tuning the magnetoresistance of ultrathin WTe2 sheets by electrostatic gating. Nanoscale, 8(44), 18703-18709. https://doi.org/10.1039/c6nr06327f