Tuning Organic Electrochemical Transistor Threshold Voltage using Chemically Doped Polymer Gates

Siew Ting Melissa Tan, Gijun Lee, Ilaria Denti, Garrett LeCroy, Kalee Rozylowicz, Adam Marks, Sophie Griggs, Iain McCulloch, Alexander Giovannitti, Alberto Salleo

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


Organic electrochemical transistors (OECTs) have shown promise as transducers and amplifiers of minute electronic potentials due to their large transconductances. Tuning the OECT threshold voltage is important to achieve low-powered devices with amplification properties within the desired operational voltage range. However, traditional design approaches have struggled to decouple channel and materials properties from threshold voltage, thereby compromising on several other OECT performance metrics, such as electrochemical stability, transconductance, and dynamic range. In this work, simple solution-processing methods are utilized to chemically dope polymer gate electrodes, thereby controlling their work function, which in turn tunes the operation voltage range of the OECTs without perturbing their channel properties. Chemical doping of initially air-sensitive polymer electrodes further improves their electrochemical stability in ambient conditions. Thus, OECTs that are simultaneously low-powered and electrochemically resistant to oxidative side reactions under ambient conditions are demonstrated. This approach shows that threshold voltage, which is once interwoven with other OECT properties, can in fact be an independent design parameter, expanding the design space of OECTs.

Original languageEnglish (US)
Article number2202359
JournalAdvanced Materials
Issue number33
StatePublished - Aug 18 2022
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


  • chemical doping
  • gate electrodes
  • organic electrochemical transistors
  • threshold voltage
  • work function


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