Abstract
We report direct measurements of the spin-orbit interaction-induced spin splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2× 10-4 strain. The results are in very good agreement with our numerical calculations of the strain-induced spin splitting.
Original language | English (US) |
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Article number | 153304 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 75 |
Issue number | 15 |
DOIs | |
State | Published - Apr 17 2007 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics