We report direct measurements of the spin-orbit interaction-induced spin splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2× 10-4 strain. The results are in very good agreement with our numerical calculations of the strain-induced spin splitting.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Apr 17 2007|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics