Tuning of the spin-orbit interaction in two-dimensional GaAs holes via strain

B. Habib, J. Shabani, E. P. De Poortere, M. Shayegan, R. Winkler

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

We report direct measurements of the spin-orbit interaction-induced spin splitting in a modulation-doped GaAs two-dimensional hole system as a function of anisotropic, in-plane strain. The change in spin-subband densities reveals a remarkably strong dependence of the spin splitting on strain, with up to about 20% enhancement of the splitting upon the application of only about 2× 10-4 strain. The results are in very good agreement with our numerical calculations of the strain-induced spin splitting.

Original languageEnglish (US)
Article number153304
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number15
DOIs
StatePublished - Apr 17 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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