Tuning of Fermi contour anisotropy in GaAs (001) 2D holes via strain

Insun Jo, M. A. Mueed, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler, Medini Padmanabhan, M. Shayegan

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We demonstrate tuning of the Fermi contour anisotropy of two-dimensional (2D) holes in a symmetric GaAs (001) quantum well via the application of in-plane strain. The ballistic transport of high-mobility hole carriers allows us to measure the Fermi wavevector of 2D holes via commensurability oscillations as a function of strain. Our results show that a small amount of in-plane strain, on the order of 10-4, can induce significant Fermi wavevector anisotropy as large as 3.3, equivalent to a mass anisotropy of 11 in a parabolic band. Our method to tune the anisotropy in situ provides a platform to study the role of anisotropy in phenomena such as the fractional quantum Hall effect and composite fermions in interacting 2D systems.

Original languageEnglish (US)
Article number252103
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 19 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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