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Tunable, long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors
J. R. Jimenez
, X. Xiao
,
J. C. Sturm
, P. W. Pellegrini
Electrical and Computer Engineering
Omenn-Darling Bioengineering Institute
Keller Center for Innovation in Engineering Education
Princeton Materials Institute
Research output
:
Contribution to journal
›
Article
›
peer-review
35
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Scopus citations
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Keyphrases
SiGe
100%
Long Wavelength
100%
PtSi
100%
Infrared Detector
100%
Schottky Diode
100%
Barrier Height
83%
SiGe Layer
33%
Hot Carriers
33%
Reverse Bias
33%
Low Barrier
16%
Zero Bias
16%
Wavelength Range
16%
Quantum Efficiency
16%
Close Proximity
16%
Layer Thickness
16%
Energy Loss
16%
Schottky Barrier
16%
Cutoff Wavelength
16%
Applied Bias
16%
Tunable Range
16%
Quasielastic Scattering
16%
Photoresponse
16%
Detection Range
16%
Valence Band Offset
16%
Effective Barrier
16%
Efficiency Coefficient
16%
Voltage Sensitivity
16%
Engineering
Barrier Height
100%
Reverse Bias
40%
Energy Dissipation
20%
Quantum Efficiency
20%
Layer Thickness
20%
Close Proximity
20%
Schottky Barrier
20%
Valence Band
20%
Cutoff Wavelength
20%
Height Range
20%
Band Offset
20%
Efficiency Coefficient
20%
Detection Range
20%
Material Science
Schottky Diode
100%
Hot Carrier
100%
Schottky Barrier
50%
Band Offset
50%
Physics
Infrared Detector
100%
Schottky Diode
100%
Theoretical Model
50%