Abstract
New modulation-doped quantum semiconductor structures that exhibit strong Fano interference effects have been designed and demonstrated. Intersubband absorption experiments clearly demonstrate the ability to engineer Fano resonances and their evolution toward bound-to-bound transitions as the continuum is progressively modified under the action of an electric field normal to the layers.
Original language | English (US) |
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Pages (from-to) | 985-987 |
Number of pages | 3 |
Journal | Optics Letters |
Volume | 21 |
Issue number | 13 |
DOIs | |
State | Published - Jul 1 1996 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics