TY - JOUR
T1 - Tunability of the topological nodal-line semimetal phase in ZrSiX -type materials (X= S, Se, Te) TUNABILITY of the TOPOLOGICAL NODAL-LINE ... M. MOFAZZEL HOSEN et al.
AU - Hosen, M. Mofazzel
AU - Dimitri, Klauss
AU - Belopolski, Ilya
AU - Maldonado, Pablo
AU - Sankar, Raman
AU - Dhakal, Nagendra
AU - Dhakal, Gyanendra
AU - Cole, Taiason
AU - Oppeneer, Peter M.
AU - Kaczorowski, Dariusz
AU - Chou, Fangcheng
AU - Hasan, M. Zahid
AU - Durakiewicz, Tomasz
AU - Neupane, Madhab
PY - 2017/4/3
Y1 - 2017/4/3
N2 - The discovery of a topological nodal-line (TNL) semimetal phase in ZrSiS has invigorated the study of other members of this family. Here, we present a comparative electronic structure study of ZrSiX (where X=S, Se, Te) using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Our ARPES studies show that the overall electronic structure of ZrSiX materials comprises the diamond-shaped Fermi pocket, the nearly elliptical-shaped Fermi pocket, and a small electron pocket encircling the zone center (Γ) point, the M point, and the X point of the Brillouin zone, respectively. We also observe a small Fermi surface pocket along the M-Γ-M direction in ZrSiTe, which is absent in both ZrSiS and ZrSiSe. Furthermore, our theoretical studies show a transition from nodal-line to nodeless gapped phase by tuning the chalcogenide from S to Te in these material systems. Our findings provide direct evidence for the tunability of the TNL phase in ZrSiX material systems by adjusting the spin-orbit coupling strength via the X anion.
AB - The discovery of a topological nodal-line (TNL) semimetal phase in ZrSiS has invigorated the study of other members of this family. Here, we present a comparative electronic structure study of ZrSiX (where X=S, Se, Te) using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Our ARPES studies show that the overall electronic structure of ZrSiX materials comprises the diamond-shaped Fermi pocket, the nearly elliptical-shaped Fermi pocket, and a small electron pocket encircling the zone center (Γ) point, the M point, and the X point of the Brillouin zone, respectively. We also observe a small Fermi surface pocket along the M-Γ-M direction in ZrSiTe, which is absent in both ZrSiS and ZrSiSe. Furthermore, our theoretical studies show a transition from nodal-line to nodeless gapped phase by tuning the chalcogenide from S to Te in these material systems. Our findings provide direct evidence for the tunability of the TNL phase in ZrSiX material systems by adjusting the spin-orbit coupling strength via the X anion.
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U2 - 10.1103/PhysRevB.95.161101
DO - 10.1103/PhysRevB.95.161101
M3 - Article
AN - SCOPUS:85017235091
VL - 95
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 16
M1 - 161101
ER -