Transverse magnetoresistance of the two-dimensional chiral metal

J. T. Chalker, Shivaji Lal Sondhi

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


We consider the two-dimensional chiral metal, which exists at the surface of a layered, three-dimensional sample exhibiting the integer quantum Hall effect. We calculate its magnetoresistance in response to a component of magnetic field perpendicular to the sample surface, in the low temperature, but macroscopic, regime where inelastic scattering may be neglected. The magnetoresistance is positive, following a Drude form with a field scale (Formula presented) given by the transverse field strength at which one quantum of flux (Formula presented) passes through a rectangle with sides set by the layer-spacing a and the elastic mean free path (Formula presented) Experimental measurement of this magnetoresistance may, therefore, provide a direct determination of the elastic mean free path in the chiral metal.

Original languageEnglish (US)
Pages (from-to)4999-5002
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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