Transverse magnetic focusing and the dispersion of GaAs 2D holes at (311)A heterojunctions

J. J. Heremans; M. B. Santos; M. Shayegan

doi:10.1016/0039-6028(94)90914-8

Transverse magnetic focusing and the dispersion of GaAs 2D holes at (311)A heterojunctions

J. J. Heremans, M. B. Santos, M. Shayegan

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We report transverse magnetic focusing experiments on two-dimensional hole systems confined in square and triangular quantum wells grown on (311)A GaAs substrates. The focusing barriers arc oriented along different crystallographic directions and allow us to derive the constant energy contours in K-space. The results indicate a nearly elliptical shape for these contours which we interpret in light of a lateral surface superlatticc induced by corrugations at the heterojunction.

Original language	English (US)
Pages (from-to)	348-352
Number of pages	5
Journal	Surface Science
Volume	305
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(94)90914-8
State	Published - Mar 20 1994

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)90914-8

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title = "Transverse magnetic focusing and the dispersion of GaAs 2D holes at (311)A heterojunctions",

abstract = "We report transverse magnetic focusing experiments on two-dimensional hole systems confined in square and triangular quantum wells grown on (311)A GaAs substrates. The focusing barriers arc oriented along different crystallographic directions and allow us to derive the constant energy contours in K-space. The results indicate a nearly elliptical shape for these contours which we interpret in light of a lateral surface superlatticc induced by corrugations at the heterojunction.",

author = "Heremans, {J. J.} and Santos, {M. B.} and M. Shayegan",

note = "Funding Information: We thank K. Hirakawa for helpful discussions. This work was supportedb y the National Science Foundation, the Army Research Office and the IBM Corporation.T he authorsa re affiliated with the Advanced Technology Center in Photonics and Opto-Electronic Materials established at Princeton Universityb y the State of New Jersey.",

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doi = "10.1016/0039-6028(94)90914-8",

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T1 - Transverse magnetic focusing and the dispersion of GaAs 2D holes at (311)A heterojunctions

AU - Heremans, J. J.

AU - Santos, M. B.

AU - Shayegan, M.

N1 - Funding Information: We thank K. Hirakawa for helpful discussions. This work was supportedb y the National Science Foundation, the Army Research Office and the IBM Corporation.T he authorsa re affiliated with the Advanced Technology Center in Photonics and Opto-Electronic Materials established at Princeton Universityb y the State of New Jersey.

PY - 1994/3/20

Y1 - 1994/3/20

N2 - We report transverse magnetic focusing experiments on two-dimensional hole systems confined in square and triangular quantum wells grown on (311)A GaAs substrates. The focusing barriers arc oriented along different crystallographic directions and allow us to derive the constant energy contours in K-space. The results indicate a nearly elliptical shape for these contours which we interpret in light of a lateral surface superlatticc induced by corrugations at the heterojunction.

AB - We report transverse magnetic focusing experiments on two-dimensional hole systems confined in square and triangular quantum wells grown on (311)A GaAs substrates. The focusing barriers arc oriented along different crystallographic directions and allow us to derive the constant energy contours in K-space. The results indicate a nearly elliptical shape for these contours which we interpret in light of a lateral surface superlatticc induced by corrugations at the heterojunction.

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U2 - 10.1016/0039-6028(94)90914-8

DO - 10.1016/0039-6028(94)90914-8

M3 - Article

AN - SCOPUS:0028400229

SN - 0039-6028

VL - 305

SP - 348

EP - 352

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Transverse magnetic focusing and the dispersion of GaAs 2D holes at (311)A heterojunctions

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