Recent experimental and theoretical work on the metal-insulator transition in phosphorous doped silicon (Si:P) is reviewed. Selected transport and thermodynamic properties of uncompensated and compensated samples are compared with the predictions of the scaling theory of localization and with the local moment theory. The implications for the breakdown of Landau's Fermi-liquid theory are discussed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering