Transport and thermodynamic properties across the metal-insulator transition

M. A. Paalanen, R. N. Bhatt

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

Recent experimental and theoretical work on the metal-insulator transition in phosphorous doped silicon (Si:P) is reviewed. Selected transport and thermodynamic properties of uncompensated and compensated samples are compared with the predictions of the scaling theory of localization and with the local moment theory. The implications for the breakdown of Landau's Fermi-liquid theory are discussed.

Original languageEnglish (US)
Pages (from-to)223-230
Number of pages8
JournalPhysica B: Physics of Condensed Matter
Volume169
Issue number1-4
DOIs
StatePublished - Feb 2 1991
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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