Transport and percolation in a low-density high-mobility two-dimensional hole system

M. J. Manfra, E. H. Hwang, S. Das Sarma, L. N. Pfeiffer, K. W. West, A. M. Sergent

Research output: Contribution to journalArticlepeer-review

68 Scopus citations

Abstract

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p 4×109cm-2), the nonmonotonic temperature dependence (∼50-300mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8×109cm-2.

Original languageEnglish (US)
Article number236402
JournalPhysical review letters
Volume99
Issue number23
DOIs
StatePublished - Dec 6 2007
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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