Transparent conducting films of GaInO3 by sputtering

J. Kwo, S. A. Carter, R. J. Cava, S. Y. Hou, J. M. Phillips, D. H. Rapkine, G. A. Thomas, R. B. van Dover

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

A new candidate for the transparent conductor, GaInO3, shows promise of improved optical transmission in the blue wavelength over ITO due to a high band gap approx.3.3 eV. Thin films of GaInO3 with cation dopants Ge for Ga, and Sn for In, respectively, have been prepared using dc reactive magnetron sputtering. Oxygen partial pressure significantly affects the film quality. A post-anneal in H2-rich atmosphere at 300°C reduced the oxygen content and lowered the resistivity to approx.3.0 mΩ-cm; the final resistivity however appears to be insensitive to cation dopant concentrations. The optical transmission of this new material is indeed superior to ITO over the entire visible spectrum, especially in the green and blue wavelengths.

Original languageEnglish (US)
Pages (from-to)241-246
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume345
DOIs
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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