Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

Gang Chen; R. Rapaport; C. Gmachl; H. M. Ng

doi:10.1109/ISCS.2003.1239882

Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

Gang Chen, R. Rapaport, C. Gmachl, H. M. Ng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.

Original language	English (US)
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	14-15
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239882
State	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Other

Other	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	8/25/03 → 8/27/03

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Keywords

Absorption
Aluminum gallium nitride
Gallium nitride
Nonlinear optics
Optical pumping
Optical saturation
Optical scattering
Optical superlattices
Probes
Ultrafast optics

Access to Document

10.1109/ISCS.2003.1239882

Cite this

Chen, G., Rapaport, R., Gmachl, C., & Ng, H. M. (2003). Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 14-15). Article 1239882 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239882

Chen, Gang ; Rapaport, R. ; Gmachl, C. et al. / Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures. 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 14-15 (IEEE International Symposium on Compound Semiconductors, Proceedings).

@inproceedings{97caeaaa487f4defa9cdf5e0f84ac5ed,

title = "Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures",

abstract = "In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.",

keywords = "Absorption, Aluminum gallium nitride, Gallium nitride, Nonlinear optics, Optical pumping, Optical saturation, Optical scattering, Optical superlattices, Probes, Ultrafast optics",

author = "Gang Chen and R. Rapaport and C. Gmachl and Ng, {H. M.}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239882",

language = "English (US)",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "14--15",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

address = "United States",

}

Chen, G, Rapaport, R, Gmachl, C & Ng, HM 2003, Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239882, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 14-15, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 8/25/03. https://doi.org/10.1109/ISCS.2003.1239882

Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures. / Chen, Gang; Rapaport, R.; Gmachl, C. et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 14-15 1239882 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

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AU - Rapaport, R.

AU - Gmachl, C.

AU - Ng, H. M.

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N2 - In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.

AB - In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.

KW - Absorption

KW - Aluminum gallium nitride

KW - Gallium nitride

KW - Nonlinear optics

KW - Optical pumping

KW - Optical saturation

KW - Optical scattering

KW - Optical superlattices

KW - Probes

KW - Ultrafast optics

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M3 - Conference contribution

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T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 14

EP - 15

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Chen G, Rapaport R, Gmachl C, Ng HM. Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 14-15. 1239882. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239882

Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

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All Science Journal Classification (ASJC) codes

Keywords

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