Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

Gang Chen, R. Rapaport, C. Gmachl, H. M. Ng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.

Original languageEnglish (US)
Title of host publication2003 International Symposium on Compound Semiconductors, ISCS 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages14-15
Number of pages2
ISBN (Electronic)0780378202
DOIs
StatePublished - Jan 1 2003
Externally publishedYes
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Publication series

NameIEEE International Symposium on Compound Semiconductors, Proceedings
Volume2003-January

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Keywords

  • Absorption
  • Aluminum gallium nitride
  • Gallium nitride
  • Nonlinear optics
  • Optical pumping
  • Optical saturation
  • Optical scattering
  • Optical superlattices
  • Probes
  • Ultrafast optics

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  • Cite this

    Chen, G., Rapaport, R., Gmachl, C., & Ng, H. M. (2003). Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 14-15). [1239882] (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239882