Transients of the photoluminescence from EHD in doped and undoped Ge

M. Chen, Stephen Aplin Lyon, K. R. Elliott, D. L. Smith, T. C. McGill

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The decay characteristics of luminescence from EHD in pure Ge and Ge doped in the range of 1015 cm-3 are reported for 4.2 K and 2 K. These characteristics are found to be in agreement with calculations based on a model which includes multidrop effects and exciton diffusion.

Original languageEnglish (US)
Pages (from-to)622-627
Number of pages6
JournalIl Nuovo Cimento B Series 11
Volume39
Issue number2
DOIs
StatePublished - Jun 1 1977
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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