Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework

Bahman Hekmatshoar, Sigurd Wagner, James C. Sturm

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

We report that the dependence of the lifetime of hydrogenated amorphous silicon (a -Si:H) thin-film transistors (TFTs) versus channel sheet resistance (R sheet) exhibits two distinctly different regimes. At low Rsheet (high gate electric field) the lifetime is strongly dependent on Rsheet, decreasing as Rsheet is decreased. At high Rsheet (low gate electric field), the lifetime becomes independent of Rsheet. These two regimes of lifetime are dominated by different degradation mechanisms. By including hydrogen dilution in the deposition process, the extrapolated time for the 10% and 50% decay of the TFT current under dc operation in the low gate field regime can be raised to over 2 and 1000 yr, respectively.

Original languageEnglish (US)
Article number143504
JournalApplied Physics Letters
Volume95
Issue number14
DOIs
StatePublished - Oct 19 2009

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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