Topological surface states of Bi2Te2Se are robust against surface chemical modification

Conor R. Thomas, Girija Sahasrabudhe, Satya Kumar Kushwaha, Jun Xiong, Robert J. Cava, Jeffrey Schwartz

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The robustness of the Dirac-like electronic states on the surfaces of topological insulators (TIs) during materials process-ing is a prerequisite for their eventual device application. Here, the (001) cleavage surfaces of crystals of the topological insulator Bi2Te2Se (BTS) were subjected to several surface chemical modification procedures that are common for electronic materials. Through measurement of Shubnikov-de Hass (SdH) oscillations, which are the most sensitive measure of their quality, the surface states of the treated surfaces were compared to those of pristine BTS that had been exposed to ambient conditions. In each case - surface oxidation, deposition of thin layers of Ti or Zr oxides, or chemical modification of the surface oxides - the robustness of the topological surface electronic states was demonstrated by noting only very small changes in the frequency and amplitude of the SdH oscillations.

Original languageEnglish (US)
Pages (from-to)997-1002
Number of pages6
JournalPhysica Status Solidi - Rapid Research Letters
Volume8
Issue number12
DOIs
StatePublished - Dec 1 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Keywords

  • BiTeSe
  • Quantum oscillations
  • Surface states
  • Surfaces
  • Topological insulators

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