Topological surface states and Dirac point tuning in ternary topological insulators

M. Neupane, S. Y. Xu, L. A. Wray, A. Petersen, R. Shankar, N. Alidoust, Chang Liu, A. Fedorov, H. Ji, J. M. Allred, Y. S. Hor, T. R. Chang, H. T. Jeng, H. Lin, A. Bansil, R. J. Cava, M. Z. Hasan

Research output: Contribution to journalArticlepeer-review

180 Scopus citations

Abstract

Using angle-resolved photoemission spectroscopy, we report electronic structure for representative members of ternary topological insulators. We show that several members of this family, such as Bi 2Se 2Te, Bi 2Te 2Se, and GeBi 2Te 4, exhibit a singly degenerate Dirac-like surface state, while Bi 2Se 2S is a fully gapped insulator with no measurable surface state. One of these compounds, Bi 2Se 2Te, shows tunable surface state dispersion upon its electronic alloying with Sb (Sb xBi 2-xSe 2Te series). Other members of the ternary family such as GeBi 2Te 4 and BiTe 1.5S 1.5 show an in-gap surface Dirac point, the former of which has been predicted to show nonzero weak topological invariants such as (1;111); thus belonging to a different topological class than BiTe 1.5S 1.5. The measured band structure presented here will be a valuable guide for interpreting transport, thermoelectric, and thermopower measurements on these compounds. The unique surface band topology observed in these compounds contributes towards identifying designer materials with desired flexibility needed for thermoelectric and spintronic device fabrication.

Original languageEnglish (US)
Article number235406
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume85
Issue number23
DOIs
StatePublished - Jun 4 2012

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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