Topological-metal to band-insulator transition in (Bi 1-xIn x) 2Se 3 thin films

Matthew Brahlek, Namrata Bansal, Nikesh Koirala, Su Yang Xu, Madhab Neupane, Chang Liu, M. Zahid Hasan, Seongshik Oh

Research output: Contribution to journalArticle

140 Scopus citations

Abstract

By combining transport and photoemission measurements on (Bi 1-xIn x) 2Se 3 thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x≈3%-7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x≈15%, the metal becomes a variable-range-hopping insulator. Finally, above x≈25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.

Original languageEnglish (US)
Article number186403
JournalPhysical review letters
Volume109
Issue number18
DOIs
StatePublished - Oct 31 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Brahlek, M., Bansal, N., Koirala, N., Xu, S. Y., Neupane, M., Liu, C., Hasan, M. Z., & Oh, S. (2012). Topological-metal to band-insulator transition in (Bi 1-xIn x) 2Se 3 thin films. Physical review letters, 109(18), [186403]. https://doi.org/10.1103/PhysRevLett.109.186403