By combining transport and photoemission measurements on (Bi 1-xIn x) 2Se 3 thin films, we report that this system transforms from a topologically nontrivial metal into a topologically trivial band insulator through three quantum phase transitions. At x≈3%-7%, there is a transition from a topologically nontrivial metal to a trivial metal. At x≈15%, the metal becomes a variable-range-hopping insulator. Finally, above x≈25%, the system becomes a true band insulator with its resistance immeasurably large even at room temperature. This material provides a new venue to investigate topologically tunable physics and devices with seamless gating or tunneling insulators.
|Original language||English (US)|
|Journal||Physical review letters|
|State||Published - Oct 31 2012|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)