Topological insulator (TI) materials such as Bi 2Te 3 and Bi 2Se 3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi 2Te 3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via x-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi 2Te 3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of ∼350 cm 2/Vs at 300 K and ∼7400 cm 2/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Oct 15 2012|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)