Topological insulator Bi 2Te 3 films synthesized by metal organic chemical vapor deposition

Helin Cao, Rama Venkatasubramanian, Chang Liu, Jonathan Pierce, Haoran Yang, M. Zahid Hasan, Yue Wu, Yong P. Chen

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

Topological insulator (TI) materials such as Bi 2Te 3 and Bi 2Se 3 have attracted strong recent interests. Large scale, high quality TI thin films are important for developing TI-based device applications. In this work, structural and electronic properties of Bi 2Te 3 thin films deposited by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrates were characterized via x-ray diffraction (XRD), Raman spectroscopy, angle-resolved photoemission spectroscopy (ARPES), and electronic transport measurements. The characteristic topological surface states with a single Dirac cone have been clearly revealed in the electronic band structure measured by ARPES, confirming the TI nature of the MOCVD Bi 2Te 3 films. Resistivity and Hall effect measurements have demonstrated relatively high bulk carrier mobility of ∼350 cm 2/Vs at 300 K and ∼7400 cm 2/Vs at 15 K. We have also measured the Seebeck coefficient of the films. Our demonstration of high quality topological insulator films grown by a simple and scalable method is of interests for both fundamental research and practical applications of thermoelectric and TI materials.

Original languageEnglish (US)
Article number162104
JournalApplied Physics Letters
Volume101
Issue number16
DOIs
StatePublished - Oct 15 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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