TOF mobility measurements in pristine films of P3HT: Control of hole injection and influence of film thickness

Amy M. Ballantyne, Joanne S. Wilson, Jenny Nelson, Donal D.C. Bradley, James R. Durrant, Martin Heeney, Warren Duffy, Iain McCulloch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations


Time-of-flight (TOF) photocurrent measurements have been used to study charge transport in films of regioregular poly(3-hexylthiophene) (P3HT). Devices in which the P3HT film had been deposited directly onto an indium tin oxide (ITO) electrode produced high dark currents as a result of hole injection into P3HT from ITO. Photocurrent transients in such devices were disperse. It was found however, that these dark currents could be significantly reduced by inserting a dense TiO2 layer between the ITO and the polymer film. The resulting devices gave non-dispersive transients with hole and electron mobilities in the range of 1 - 2 10-4 cm2 V-1 s-1 at room temperature. The mobility values were observed to be almost independent of film thickness over the range of 350 nm to 4.3 μm. Temperature dependence studies showed a weak dependence on temperature with a low energetic disorder parameter according to analysis using the Gaussian Disorder Model (GDM) of 71 meV.

Original languageEnglish (US)
Title of host publicationOrganic Photovoltaics VII
StatePublished - 2006
Externally publishedYes
EventOrganic Photovoltaics VII - San Diego, CA, United States
Duration: Aug 15 2006Aug 17 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOrganic Photovoltaics VII
Country/TerritoryUnited States
CitySan Diego, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


  • Charge mobility
  • Poly(3-hexylthiophene)
  • Time-of-flight


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