We found threshold voltage sensitivity to silicon thickness variation in 0.1 µm channel length fully-depleted SOI NMOSFET's can be reduced with lightly-doped channel and back-gate bias. However, after the back-interface is accumulated, the reduction is small and threshold voltage roll-off due to high drain bias increases.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering