Threshold Voltage Sensitivity of 0.1 µm Channel Length Fully-Depleted SOI NMOSFET's with Back-Gate Bias

Effendi Leobandung, Stephen Y. Chou

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We found threshold voltage sensitivity to silicon thickness variation in 0.1 µm channel length fully-depleted SOI NMOSFET's can be reduced with lightly-doped channel and back-gate bias. However, after the back-interface is accumulated, the reduction is small and threshold voltage roll-off due to high drain bias increases.

Original languageEnglish (US)
Pages (from-to)1707-1709
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume42
Issue number9
DOIs
StatePublished - Sep 1995
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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