Threshold voltage as a measure of molecular level shift in organic thin-film transistors

Oren Tal; Yossi Rosenwaks; Yohai Roichman; Yevgeni Preezant; Nir Tessler; Calvin K. Chan; Antoine Kahn

doi:10.1063/1.2167395

Threshold voltage as a measure of molecular level shift in organic thin-film transistors

Oren Tal
, Yossi Rosenwaks
, Yohai Roichman
, Yevgeni Preezant
, Nir Tessler
, Calvin K. Chan
, Antoine Kahn

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

The potential across an organic thin-film transistor is measured by Kelvin probe force microscopy and is used to determine directly the pinch-off voltage at different gate voltages. These measurements lead to the determination of a generalized threshold voltage, which corresponds to molecular level shift as a function of the gate voltage. A comparison between measured and calculated threshold voltage reveals a deviation from a simple Gaussian distribution of the transport density of states available for holes.

Original language	English (US)
Article number	043509
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	4
DOIs	https://doi.org/10.1063/1.2167395
State	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2167395

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@article{1494c640b17247fb8c0e724331022e69,

title = "Threshold voltage as a measure of molecular level shift in organic thin-film transistors",

abstract = "The potential across an organic thin-film transistor is measured by Kelvin probe force microscopy and is used to determine directly the pinch-off voltage at different gate voltages. These measurements lead to the determination of a generalized threshold voltage, which corresponds to molecular level shift as a function of the gate voltage. A comparison between measured and calculated threshold voltage reveals a deviation from a simple Gaussian distribution of the transport density of states available for holes.",

author = "Oren Tal and Yossi Rosenwaks and Yohai Roichman and Yevgeni Preezant and Nir Tessler and Chan, \{Calvin K.\} and Antoine Kahn",

note = "Funding Information: This research was supported by the US-Israel Binational Science Foundation (BSF), Grant No. 2000-092. Additional support of the work in Princeton was provided by the NSF (DMR-0408589).",

year = "2006",

doi = "10.1063/1.2167395",

language = "English (US)",

volume = "88",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Threshold voltage as a measure of molecular level shift in organic thin-film transistors

AU - Tal, Oren

AU - Rosenwaks, Yossi

AU - Roichman, Yohai

AU - Preezant, Yevgeni

AU - Tessler, Nir

AU - Chan, Calvin K.

AU - Kahn, Antoine

N1 - Funding Information: This research was supported by the US-Israel Binational Science Foundation (BSF), Grant No. 2000-092. Additional support of the work in Princeton was provided by the NSF (DMR-0408589).

PY - 2006

Y1 - 2006

N2 - The potential across an organic thin-film transistor is measured by Kelvin probe force microscopy and is used to determine directly the pinch-off voltage at different gate voltages. These measurements lead to the determination of a generalized threshold voltage, which corresponds to molecular level shift as a function of the gate voltage. A comparison between measured and calculated threshold voltage reveals a deviation from a simple Gaussian distribution of the transport density of states available for holes.

AB - The potential across an organic thin-film transistor is measured by Kelvin probe force microscopy and is used to determine directly the pinch-off voltage at different gate voltages. These measurements lead to the determination of a generalized threshold voltage, which corresponds to molecular level shift as a function of the gate voltage. A comparison between measured and calculated threshold voltage reveals a deviation from a simple Gaussian distribution of the transport density of states available for holes.

UR - https://www.scopus.com/pages/publications/31544458980

UR - https://www.scopus.com/pages/publications/31544458980#tab=citedBy

U2 - 10.1063/1.2167395

DO - 10.1063/1.2167395

M3 - Article

AN - SCOPUS:31544458980

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043509

ER -

Threshold voltage as a measure of molecular level shift in organic thin-film transistors

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All Science Journal Classification (ASJC) codes

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