Threshold voltage as a measure of molecular level shift in organic thin-film transistors

Oren Tal, Yossi Rosenwaks, Yohai Roichman, Yevgeni Preezant, Nir Tessler, Calvin K. Chan, Antoine Kahn

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Abstract

The potential across an organic thin-film transistor is measured by Kelvin probe force microscopy and is used to determine directly the pinch-off voltage at different gate voltages. These measurements lead to the determination of a generalized threshold voltage, which corresponds to molecular level shift as a function of the gate voltage. A comparison between measured and calculated threshold voltage reveals a deviation from a simple Gaussian distribution of the transport density of states available for holes.

Original languageEnglish (US)
Article number043509
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number4
DOIs
StatePublished - Feb 6 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Tal, O., Rosenwaks, Y., Roichman, Y., Preezant, Y., Tessler, N., Chan, C. K., & Kahn, A. (2006). Threshold voltage as a measure of molecular level shift in organic thin-film transistors. Applied Physics Letters, 88(4), 1-3. [043509]. https://doi.org/10.1063/1.2167395