Threshold Dynamics of a Semiconductor Single Atom Maser

Y. Y. Liu, J. Stehlik, C. Eichler, X. Mi, T. R. Hartke, M. J. Gullans, J. M. Taylor, J. R. Petta

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15 Scopus citations

Abstract

We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.

Original languageEnglish (US)
Article number097702
JournalPhysical review letters
Volume119
Issue number9
DOIs
StatePublished - Aug 31 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Liu, Y. Y., Stehlik, J., Eichler, C., Mi, X., Hartke, T. R., Gullans, M. J., Taylor, J. M., & Petta, J. R. (2017). Threshold Dynamics of a Semiconductor Single Atom Maser. Physical review letters, 119(9), [097702]. https://doi.org/10.1103/PhysRevLett.119.097702