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Three-dimensional spatiokinetic distributions of sputtered and scattered products of Ar+ and Cu+ impacts onto the Cu surface: Molecular dynamics simulations

Research output: Contribution to journalArticlepeer-review

Abstract

Energy and angular distributions of reflections and sputtered atoms are essential inputs for feature profile evolution simulations. Molecular dynamics simulations are used to compute the three-dimensional energy and angular distributions for reflected and sputtered products when both Ar+ and Cu+ ions bombard a copper surface. We term these "spatiokinetic" distribution functions (SKDF's). We show by example that SKDF's for reflected Ar+ ions focus as the incident angle #; (normal -0°) is increased from 60-75° and broaden as the incident energy Ei is increased from 55-175 eV. We show that the SKDF's for glancingangle reflected Cu+ ions focus when Ei is increased from 55-175 eV. We show that the SKDF's for copper atoms sputtered by 175 eV Ar+ are insensitive to #;. We report total sputter yields for Ar+ and Cu+ ions at 55 and 175 eV for incident angles between 0° and 85°, and sticking probabilities for Cu+ ions for these energies and angles. Comparison to representative experimental results [1] is given.

Original languageEnglish (US)
Pages (from-to)1426-1432
Number of pages7
JournalIEEE Transactions on Plasma Science
Volume27
Issue number5
DOIs
StatePublished - 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

Keywords

  • Copper
  • Ion reflection
  • Ionized physical vapor deposition (ipvd)
  • Molecular dynamics
  • Sputtering

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