Three-dimensional spatiokinetic distributions of sputtered and scattered products of Ar+ and Cu+ impacts onto the Cu surface: Molecular dynamics simulations

Cameron F. Abrams, David B. Graves

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Energy and angular distributions of reflections and sputtered atoms are essential inputs for feature profile evolution simulations. Molecular dynamics simulations are used to compute the three-dimensional energy and angular distributions for reflected and sputtered products when both Ar+ and Cu+ ions bombard a copper surface. We term these "spatiokinetic" distribution functions (SKDF's). We show by example that SKDF's for reflected Ar+ ions focus as the incident angle #; (normal -0°) is increased from 60-75° and broaden as the incident energy Ei is increased from 55-175 eV. We show that the SKDF's for glancingangle reflected Cu+ ions focus when Ei is increased from 55-175 eV. We show that the SKDF's for copper atoms sputtered by 175 eV Ar+ are insensitive to #;. We report total sputter yields for Ar+ and Cu+ ions at 55 and 175 eV for incident angles between 0° and 85°, and sticking probabilities for Cu+ ions for these energies and angles. Comparison to representative experimental results [1] is given.

Original languageEnglish (US)
Pages (from-to)1426-1432
Number of pages7
JournalIEEE Transactions on Plasma Science
Volume27
Issue number5
DOIs
StatePublished - 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

Keywords

  • Copper
  • Ion reflection
  • Ionized physical vapor deposition (ipvd)
  • Molecular dynamics
  • Sputtering

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