Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

C. M. Gronet, J. C. Sturm, K. E. Williams, J. F. Gibbons, S. D. Wilson

Research output: Contribution to journalArticle

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Abstract

Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.

Original languageEnglish (US)
Pages (from-to)1012-1014
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number15
DOIs
StatePublished - Dec 1 1986
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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