Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

C. M. Gronet; J. C. Sturm; K. E. Williams; J. F. Gibbons; S. D. Wilson

doi:10.1063/1.96620

Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

C. M. Gronet, J. C. Sturm, K. E. Williams, J. F. Gibbons, S. D. Wilson

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Abstract

Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p⁺ epitaxial films are comparable to bulk material.

Original language	English (US)
Pages (from-to)	1012-1014
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	15
DOIs	https://doi.org/10.1063/1.96620
State	Published - 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.96620

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abstract = "Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.",

author = "Gronet, {C. M.} and Sturm, {J. C.} and Williams, {K. E.} and Gibbons, {J. F.} and Wilson, {S. D.}",

year = "1986",

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AU - Gronet, C. M.

AU - Sturm, J. C.

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AU - Gibbons, J. F.

AU - Wilson, S. D.

PY - 1986

Y1 - 1986

N2 - Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.

AB - Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron-doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.

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Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

Abstract

All Science Journal Classification (ASJC) codes

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