Abstract
We report the first amorphous silicon thin film transistors (TFTs) on flexible, ultra-thin substrates of 25 μm thick stainless steel foil. The transistors remain operational under convex or concave bending down to 2.5 mm radius of curvature. The goal of our work is a transistor backplane circuit that can be folded, for use in active matrices in highly rugged and portable applications such as foldable intelligent maps. Our results suggest that such foldable backplane circuits are feasible.
Original language | English (US) |
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Pages (from-to) | 535-538 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting, IEDM |
State | Published - 1997 |
Event | 1997 International Electron Devices Meeting - Washington, DC, USA Duration: Dec 7 1997 → Dec 10 1997 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry