″THETA″/ COMPARATIVE LEED STUDIES OF ALXGA1 - XAS(110) AND GAAS(110)-AL

Antoine Kahn, J. CARELLI, D. L. MILLER, S. P. KOWALCZYK

Research output: Contribution to journalConference article

13 Scopus citations

Abstract

LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.

Original languageEnglish (US)
Pages (from-to)380-383
Number of pages4
JournalJ VAC SCI TECHNOL
VolumeV 21
Issue numberN 2
DOIs
StatePublished - Jan 1 1982
EventPROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA
Duration: Jan 27 1982Jan 29 1982

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of '″THETA″/ COMPARATIVE LEED STUDIES OF AL<sub>X</sub>GA<sub>1 </sub>- <sub>X</sub>AS(110) AND GAAS(110)-AL'. Together they form a unique fingerprint.

Cite this