Abstract
LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.
Original language | English (US) |
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Pages (from-to) | 380-383 |
Number of pages | 4 |
Journal | J VAC SCI TECHNOL |
Volume | V 21 |
Issue number | N 2 |
DOIs | |
State | Published - 1982 |
Event | PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA Duration: Jan 27 1982 → Jan 29 1982 |
All Science Journal Classification (ASJC) codes
- General Engineering