″THETA″/ COMPARATIVE LEED STUDIES OF ALXGA1 - XAS(110) AND GAAS(110)-AL

Antoine Kahn; J. CARELLI; D. L. MILLER; S. P. KOWALCZYK

doi:10.1116/1.571785

″THETA″/ COMPARATIVE LEED STUDIES OF AL_XGA₁- _XAS(110) AND GAAS(110)-AL

Antoine Kahn, J. CARELLI, D. L. MILLER, S. P. KOWALCZYK

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.

Original language	English (US)
Pages (from-to)	380-383
Number of pages	4
Journal	J VAC SCI TECHNOL
Volume	V 21
Issue number	N 2
DOIs	https://doi.org/10.1116/1.571785
State	Published - 1982
Event	PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA Duration: Jan 27 1982 → Jan 29 1982

All Science Journal Classification (ASJC) codes

General Engineering

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title = "″THETA″/ COMPARATIVE LEED STUDIES OF ALXGA1 - XAS(110) AND GAAS(110)-AL",

abstract = "LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.",

author = "Antoine Kahn and J. CARELLI and MILLER, {D. L.} and KOWALCZYK, {S. P.}",

year = "1982",

doi = "10.1116/1.571785",

language = "English (US)",

volume = "V 21",

pages = "380--383",

journal = "J VAC SCI TECHNOL",

issn = "0022-5355",

publisher = "American Institute of Physics",

number = "N 2",

note = "PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH ; Conference date: 27-01-1982 Through 29-01-1982",

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T1 - ″THETA″/ COMPARATIVE LEED STUDIES OF ALXGA1 - XAS(110) AND GAAS(110)-AL

AU - Kahn, Antoine

AU - CARELLI, J.

AU - MILLER, D. L.

AU - KOWALCZYK, S. P.

PY - 1982

Y1 - 1982

N2 - LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.

AB - LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.

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SN - 0022-5355

VL - V 21

SP - 380

EP - 383

JO - J VAC SCI TECHNOL

JF - J VAC SCI TECHNOL

IS - N 2

T2 - PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH

Y2 - 27 January 1982 through 29 January 1982

ER -

″THETA″/ COMPARATIVE LEED STUDIES OF AL_XGA₁- _XAS(110) AND GAAS(110)-AL

Abstract

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