″THETA″/ COMPARATIVE LEED STUDIES OF ALXGA1 - XAS(110) AND GAAS(110)-AL

Antoine Kahn; J. CARELLI; D. L. MILLER; S. P. KOWALCZYK

doi:10.1116/1.571785

″THETA″/ COMPARATIVE LEED STUDIES OF AL_XGA₁- _XAS(110) AND GAAS(110)-AL

Antoine Kahn, J. CARELLI, D. L. MILLER, S. P. KOWALCZYK

Research output: Contribution to journal › Conference article › peer-review

Abstract

LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.

Original language	English (US)
Pages (from-to)	380-383
Number of pages	4
Journal	J VAC SCI TECHNOL
Volume	V 21
Issue number	N 2
DOIs	https://doi.org/10.1116/1.571785
State	Published - Jan 1 1982
Event	PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA Duration: Jan 27 1982 → Jan 29 1982

All Science Journal Classification (ASJC) codes

Engineering(all)

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title = "″THETA″/ COMPARATIVE LEED STUDIES OF ALXGA1 - XAS(110) AND GAAS(110)-AL",

abstract = "LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.",

author = "Antoine Kahn and J. CARELLI and MILLER, {D. L.} and KOWALCZYK, {S. P.}",

year = "1982",

month = jan,

day = "1",

doi = "10.1116/1.571785",

language = "English (US)",

volume = "V 21",

pages = "380--383",

journal = "Journal of Vacuum Science and Technology",

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publisher = "American Institute of Physics Publising LLC",

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AU - Kahn, Antoine

AU - CARELLI, J.

AU - MILLER, D. L.

AU - KOWALCZYK, S. P.

PY - 1982/1/1

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N2 - LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.

AB - LEED INTENSITY PROFILES RECORDED FROM AL//XGA//1// - //XAS(110) MBE SURFACES ARE COMPARED WITH DATA OBTAINED FROM GAAS(110)-AL( ″THETA″ ) ANNEALED INTERFACES. THIS COMPARISON CONFIRMS THE HYPOTHESIS OF A HEAT INDUCED AL-GA REPLACEMENT REACTION AND THE FORMATION OF ALGAAS WHEN AL IS ANNEALED ON GAAS(110). ALAS(110) PRODUCES I-V PROFILES VERY DIFFERENT FROM THOSE OF GAAS(110) AND PRELIMINARY MODELING COMPUTATIONS INDICATE SMALL SURFACE ATOMIC RECONSTRUCTIONS. THE EFFECT OF THEELEMENTAL AS LAYER USED TO PROTECT AL//XGA//1// - //XAS(110) SURFACES DURING AMBIENT TRANSFER IS ALSO INVESTIGATED.

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T2 - PROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH

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ER -

″THETA″/ COMPARATIVE LEED STUDIES OF AL_XGA₁- _XAS(110) AND GAAS(110)-AL

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