@article{4d76734f64dc47c7aea27c1c6fe17b60,
title = "Thermopower of doped and damaged NbSe3",
abstract = "We have measured the thermoelectric power of pure NbSe3 as well as samples which have been substitutionally doped with isoelectronic Ta and the charged impurity Ti and separate samples which have been radiation damaged by 2.5 MeV protons. We find that 5% Ta doping supresses the lower temperature charge density wave transition. In contrast, the radiation damaged samples and 0.1% Ti samples with larger residual resistivities then the Ta doped samples retain the CDW transitions. A discussion is given of the difference between doping and radiation damage.",
author = "Chaikin, {P. M.} and Fuller, {W. W.} and R. Lacoe and Kwak, {J. F.} and Greene, {R. L.} and Eckert, {J. C.} and Ong, {N. P.}",
note = "Funding Information: In conclusion we have studied the thermopower of Ta and Ti doped samples of NbSe 3 as well as irradiated samples. Previous results have shown that Ta acts as a weak pinning site E T ~ C 2) whereas both Ti and radiation induced defects act as strong pinning sites (E T ~ C). What we find from the thermopower results is that the lower CDW transition is suppressed by doping with 5% Ta. Radiation damage samples however show both CDW transitions even for residual scattering rates exceeding that of the 5% Ta doping. This suggests that the Ta doped samples may have important changes to the nesting condition carried by Fermi level shift~ Such shifts may also be present in Ti samples for concentrations several times the 0.1% level with precursor effects at lower levels. We would llke ,, to acknowledge useful discussions with G. Gruner, T, Holstein, P. Pincus and Jim Savage. Research at UCLA supported by NSF under grant DMR 79-08560 (P. M. Chaikin) and ONR under grant N00014-76-C-1079 (W. W. Fuller) and at U.S.C. under grant NSF DMR 79-05418. P. M. Chaikin is an A. P. Sloan Foundation Fellow, W. W. Fuller is an IBM Predoctoral Fellow.",
year = "1981",
month = jul,
doi = "10.1016/0038-1098(81)90321-5",
language = "English (US)",
volume = "39",
pages = "553--557",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Ltd",
number = "4",
}