Thermopower of doped and damaged NbSe3

P. M. Chaikin, W. W. Fuller, R. Lacoe, J. F. Kwak, R. L. Greene, J. C. Eckert, N. P. Ong

Research output: Contribution to journalArticle

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Abstract

We have measured the thermoelectric power of pure NbSe3 as well as samples which have been substitutionally doped with isoelectronic Ta and the charged impurity Ti and separate samples which have been radiation damaged by 2.5 MeV protons. We find that 5% Ta doping supresses the lower temperature charge density wave transition. In contrast, the radiation damaged samples and 0.1% Ti samples with larger residual resistivities then the Ta doped samples retain the CDW transitions. A discussion is given of the difference between doping and radiation damage.

Original languageEnglish (US)
Pages (from-to)553-557
Number of pages5
JournalSolid State Communications
Volume39
Issue number4
DOIs
StatePublished - Jul 1981

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Chaikin, P. M., Fuller, W. W., Lacoe, R., Kwak, J. F., Greene, R. L., Eckert, J. C., & Ong, N. P. (1981). Thermopower of doped and damaged NbSe3. Solid State Communications, 39(4), 553-557. https://doi.org/10.1016/0038-1098(81)90321-5