Measurements of the low-temperature specific heat of phosphorus-doped silicon for densities near the metal-insulator transition show an enhancement over the conduction-band itinerant-electron value. The enhancement increases toward lower temperatures but is less than that found for the spin susceptibility. The data are compared with various theoretical models; the large ratio of the spin susceptibility to specific heat indicates the presence of localized spin excitations in the metallic phase as the metalinsulator transition is approached.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical review letters|
|State||Published - 1988|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)