Thermodynamic behavior near a metal-insulator transition

M. A. Paalanen, J. E. Graebner, R. N. Bhatt, S. Sachdev

Research output: Contribution to journalArticle

132 Scopus citations

Abstract

Measurements of the low-temperature specific heat of phosphorus-doped silicon for densities near the metal-insulator transition show an enhancement over the conduction-band itinerant-electron value. The enhancement increases toward lower temperatures but is less than that found for the spin susceptibility. The data are compared with various theoretical models; the large ratio of the spin susceptibility to specific heat indicates the presence of localized spin excitations in the metallic phase as the metalinsulator transition is approached.

Original languageEnglish (US)
Pages (from-to)597-600
Number of pages4
JournalPhysical review letters
Volume61
Issue number5
DOIs
StatePublished - Jan 1 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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