Thermalization of hot carriers in quantum wells

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Abstract

We discuss experimental and theoretical results on the energy relaxation of hot electrons in GaAs AlGaAs quantum wells. The experiments make use of optical spectroscopy for determining the carrier distribution. In particular, steady-state hot photoluminescence measurements have been employed with modulation-doped quantum wells in order to minimally perturb the system by the photo-excited carriers. Both the relaxation of very energetic electrons and the cooling of a hot thermalized carrier distribution are considered. The quantum well results are compared with similar experiments on bulk GaAs. We also discuss the role of non-equilibrium phonons and screening of the electron-phonon interaction.

Original languageEnglish (US)
Pages (from-to)261-267
Number of pages7
JournalSuperlattices and Microstructures
Volume3
Issue number3
DOIs
StatePublished - 1987

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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