Thermalization of hot carriers in quantum wells

S. A. Lyon

doi:10.1016/0749-6036(87)90069-3

Thermalization of hot carriers in quantum wells

S. A. Lyon

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We discuss experimental and theoretical results on the energy relaxation of hot electrons in GaAs AlGaAs quantum wells. The experiments make use of optical spectroscopy for determining the carrier distribution. In particular, steady-state hot photoluminescence measurements have been employed with modulation-doped quantum wells in order to minimally perturb the system by the photo-excited carriers. Both the relaxation of very energetic electrons and the cooling of a hot thermalized carrier distribution are considered. The quantum well results are compared with similar experiments on bulk GaAs. We also discuss the role of non-equilibrium phonons and screening of the electron-phonon interaction.

Original language	English (US)
Pages (from-to)	261-267
Number of pages	7
Journal	Superlattices and Microstructures
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(87)90069-3
State	Published - 1987

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(87)90069-3

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@article{00d3e8d669cc4ed7801da5d6574702c7,

title = "Thermalization of hot carriers in quantum wells",

abstract = "We discuss experimental and theoretical results on the energy relaxation of hot electrons in GaAs AlGaAs quantum wells. The experiments make use of optical spectroscopy for determining the carrier distribution. In particular, steady-state hot photoluminescence measurements have been employed with modulation-doped quantum wells in order to minimally perturb the system by the photo-excited carriers. Both the relaxation of very energetic electrons and the cooling of a hot thermalized carrier distribution are considered. The quantum well results are compared with similar experiments on bulk GaAs. We also discuss the role of non-equilibrium phonons and screening of the electron-phonon interaction.",

author = "Lyon, {S. A.}",

note = "Funding Information: The author would like to thank many colleagues. including P.M. Fauchet, DL. Smith, D.C. Tsui. C.tl. Yang, and especially J.M. Worlock for many enlightening discussions. He would also like to acknowledge the financial support of the Defense Advanced Research Projects Agency through the Office of Naval Research (Contract No. N00014-83-K-0739), and RCA, the GE Foundation, the Ford Motor Co., Varian Associates, and the National Science Foundation through the Presidential Young Investigator Program.",

year = "1987",

doi = "10.1016/0749-6036(87)90069-3",

language = "English (US)",

volume = "3",

pages = "261--267",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "3",

}

TY - JOUR

T1 - Thermalization of hot carriers in quantum wells

AU - Lyon, S. A.

N1 - Funding Information: The author would like to thank many colleagues. including P.M. Fauchet, DL. Smith, D.C. Tsui. C.tl. Yang, and especially J.M. Worlock for many enlightening discussions. He would also like to acknowledge the financial support of the Defense Advanced Research Projects Agency through the Office of Naval Research (Contract No. N00014-83-K-0739), and RCA, the GE Foundation, the Ford Motor Co., Varian Associates, and the National Science Foundation through the Presidential Young Investigator Program.

PY - 1987

Y1 - 1987

N2 - We discuss experimental and theoretical results on the energy relaxation of hot electrons in GaAs AlGaAs quantum wells. The experiments make use of optical spectroscopy for determining the carrier distribution. In particular, steady-state hot photoluminescence measurements have been employed with modulation-doped quantum wells in order to minimally perturb the system by the photo-excited carriers. Both the relaxation of very energetic electrons and the cooling of a hot thermalized carrier distribution are considered. The quantum well results are compared with similar experiments on bulk GaAs. We also discuss the role of non-equilibrium phonons and screening of the electron-phonon interaction.

AB - We discuss experimental and theoretical results on the energy relaxation of hot electrons in GaAs AlGaAs quantum wells. The experiments make use of optical spectroscopy for determining the carrier distribution. In particular, steady-state hot photoluminescence measurements have been employed with modulation-doped quantum wells in order to minimally perturb the system by the photo-excited carriers. Both the relaxation of very energetic electrons and the cooling of a hot thermalized carrier distribution are considered. The quantum well results are compared with similar experiments on bulk GaAs. We also discuss the role of non-equilibrium phonons and screening of the electron-phonon interaction.

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U2 - 10.1016/0749-6036(87)90069-3

DO - 10.1016/0749-6036(87)90069-3

M3 - Article

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VL - 3

SP - 261

EP - 267

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Thermalization of hot carriers in quantum wells

Abstract

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