Thermal stability and substitutional carbon incorporation far above solid-solubility in Si1-xCx and Si1-x-yGexCy layers grown by chemical vapor deposition using disilane

M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador, M. Berti

Research output: Contribution to journalConference article

Fingerprint Dive into the research topics of 'Thermal stability and substitutional carbon incorporation far above solid-solubility in Si<sub>1-x</sub>C<sub>x</sub> and Si<sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> layers grown by chemical vapor deposition using disilane'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy