Abstract
Growth conditions for epitaxy of S1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the Si1-xCx conditions are compared to previously reported RTCVD growth conditions for epitaxy of Si1-xCx using silane as the source gas. The thermal stability of the layers at 850°C in nitrogen is examined using x-ray diffraction as a measure of the average substitutional carbon concentration in the layers after annealing. A characteristic time constant to describe the reduction of average substitutional carbon concentration in the layer is extracted from the XRD measurements. The characteristic time constants are found to agree within a factor of 3 with that observed in previous reports. However, the time constants are found to depend more strongly on the as-grown substitutional carbon concentration than what is predicted by simple precipitation kinetics, assuming carbon diffusion to a constant number of nucleation centers.
Original language | English (US) |
---|---|
Pages (from-to) | 155-161 |
Number of pages | 7 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 717 |
DOIs | |
State | Published - 2002 |
Event | Silicon Front-End Junction Formation Technologies - San Francisco, CA, United States Duration: Apr 2 2002 → Apr 4 2002 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering