Thermal stability and substitutional carbon incorporation far above solid-solubility in Si1-xCx and Si1-x-yGexCy layers grown by chemical vapor deposition using disilane

M. S. Carroll, J. C. Sturm, E. Napolitani, D. De Salvador, M. Berti

Research output: Contribution to journalConference articlepeer-review

Abstract

Growth conditions for epitaxy of S1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the Si1-xCx conditions are compared to previously reported RTCVD growth conditions for epitaxy of Si1-xCx using silane as the source gas. The thermal stability of the layers at 850°C in nitrogen is examined using x-ray diffraction as a measure of the average substitutional carbon concentration in the layers after annealing. A characteristic time constant to describe the reduction of average substitutional carbon concentration in the layer is extracted from the XRD measurements. The characteristic time constants are found to agree within a factor of 3 with that observed in previous reports. However, the time constants are found to depend more strongly on the as-grown substitutional carbon concentration than what is predicted by simple precipitation kinetics, assuming carbon diffusion to a constant number of nucleation centers.

Original languageEnglish (US)
Pages (from-to)155-161
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume717
DOIs
StatePublished - 2002
EventSilicon Front-End Junction Formation Technologies - San Francisco, CA, United States
Duration: Apr 2 2002Apr 4 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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