THEORY OF VOLTAGE-DEPENDENT SCANNING-TUNNELING MICROSCOPY OF A CRYSTAL SURFACE: GRAPHITE.

A. Selloni, P. Carnevali, E. Tosatti, C. D. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Scanning tunneling microscopy is now well established as a powerful technique for surface structural studies. Our aim is to demonstrate how this technique might also become useful for the spectroscopy of surfaces, and in particular of surface electronic states. We do this by direct calculation of the tunneling current flowing into, or out of, a graphite surface, as a function of an applied voltage V, illustrating the direct relationship between the current J(V) and the surface electronic structure at energy E-E//F equals V. Graphite has been chosen because it is an important surface, with perfectly known atomic structure, and a simple and well-known electronic structure, where localized sigma and pi states coexist with fairly delocalized interlayer bulk states, and with recently discovered empty surface states.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
PublisherSpringer Verlag
Pages11-14
Number of pages4
ISBN (Print)0387961089, 9780387961088
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Selloni, A., Carnevali, P., Tosatti, E., & Chen, C. D. (1985). THEORY OF VOLTAGE-DEPENDENT SCANNING-TUNNELING MICROSCOPY OF A CRYSTAL SURFACE: GRAPHITE. In Unknown Host Publication Title (pp. 11-14). Springer Verlag. https://doi.org/10.1007/978-1-4615-7682-2_2