Theory of inelastic electron-surface-plasmon interactions in metal-semiconductor tunnel junctions

K. L. Ngai, E. N. Economou, Morrel H. Cohen

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The excess tunneling current due to electron-surface-plasmon interactions in semiconductor-metal tunnel junctions is calculated. The expression for the second derivative of this excess current, which corresponds to structure in d2IdV2 as an increase in conductance at bias voltages near the surface plasmon energy in the semiconductor, agrees with experiment both in magnitude and line shape.

Original languageEnglish (US)
Pages (from-to)1375-1378
Number of pages4
JournalPhysical review letters
Volume22
Issue number25
DOIs
StatePublished - Dec 1 1969
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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