Theory of inelastic electron-surface-plasmon interactions in metal-semiconductor tunnel junctions

K. L. Ngai; E. N. Economou; Morrel H. Cohen

doi:10.1103/PhysRevLett.22.1375

Theory of inelastic electron-surface-plasmon interactions in metal-semiconductor tunnel junctions

K. L. Ngai, E. N. Economou, Morrel H. Cohen

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35 Scopus citations

Abstract

The excess tunneling current due to electron-surface-plasmon interactions in semiconductor-metal tunnel junctions is calculated. The expression for the second derivative of this excess current, which corresponds to structure in d2IdV2 as an increase in conductance at bias voltages near the surface plasmon energy in the semiconductor, agrees with experiment both in magnitude and line shape.

Original language	English (US)
Pages (from-to)	1375-1378
Number of pages	4
Journal	Physical review letters
Volume	22
Issue number	25
DOIs	https://doi.org/10.1103/PhysRevLett.22.1375
State	Published - 1969
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1103/PhysRevLett.22.1375

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title = "Theory of inelastic electron-surface-plasmon interactions in metal-semiconductor tunnel junctions",

abstract = "The excess tunneling current due to electron-surface-plasmon interactions in semiconductor-metal tunnel junctions is calculated. The expression for the second derivative of this excess current, which corresponds to structure in d2IdV2 as an increase in conductance at bias voltages near the surface plasmon energy in the semiconductor, agrees with experiment both in magnitude and line shape.",

author = "Ngai, {K. L.} and Economou, {E. N.} and Cohen, {Morrel H.}",

year = "1969",

doi = "10.1103/PhysRevLett.22.1375",

language = "English (US)",

volume = "22",

pages = "1375--1378",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "25",

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TY - JOUR

T1 - Theory of inelastic electron-surface-plasmon interactions in metal-semiconductor tunnel junctions

AU - Ngai, K. L.

AU - Economou, E. N.

AU - Cohen, Morrel H.

PY - 1969

Y1 - 1969

N2 - The excess tunneling current due to electron-surface-plasmon interactions in semiconductor-metal tunnel junctions is calculated. The expression for the second derivative of this excess current, which corresponds to structure in d2IdV2 as an increase in conductance at bias voltages near the surface plasmon energy in the semiconductor, agrees with experiment both in magnitude and line shape.

AB - The excess tunneling current due to electron-surface-plasmon interactions in semiconductor-metal tunnel junctions is calculated. The expression for the second derivative of this excess current, which corresponds to structure in d2IdV2 as an increase in conductance at bias voltages near the surface plasmon energy in the semiconductor, agrees with experiment both in magnitude and line shape.

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U2 - 10.1103/PhysRevLett.22.1375

DO - 10.1103/PhysRevLett.22.1375

M3 - Article

AN - SCOPUS:0014524728

SN - 0031-9007

VL - 22

SP - 1375

EP - 1378

JO - Physical review letters

JF - Physical review letters

IS - 25

ER -

Theory of inelastic electron-surface-plasmon interactions in metal-semiconductor tunnel junctions

Abstract

All Science Journal Classification (ASJC) codes

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