TY - JOUR
T1 - Theory of electronically stimulated defect migration in semiconductors
AU - Pantelides, Sokrates T.
AU - Oshiyama, Atsushi
AU - Car, Roberto
AU - Kelly, Paul J.
PY - 1984/1/1
Y1 - 1984/1/1
N2 - We develop a theory for carrier-capture-enhanced, recombination-enhanced, and athermal defect migration in semiconductors. Contrary to assumptions made recently in describing such processes in Si, we find that knowledge of energy levels or even total energies at only the initial equilibrium and saddle points is not sufficient to determine barrier reductions. We obtain quantitative criteria for athermal migration and new insights in the enhanced migration of interstitial Al in Si, where we find a recombination channel that may significantly slow down the overall migration rate.
AB - We develop a theory for carrier-capture-enhanced, recombination-enhanced, and athermal defect migration in semiconductors. Contrary to assumptions made recently in describing such processes in Si, we find that knowledge of energy levels or even total energies at only the initial equilibrium and saddle points is not sufficient to determine barrier reductions. We obtain quantitative criteria for athermal migration and new insights in the enhanced migration of interstitial Al in Si, where we find a recombination channel that may significantly slow down the overall migration rate.
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U2 - 10.1103/PhysRevB.30.2260
DO - 10.1103/PhysRevB.30.2260
M3 - Article
AN - SCOPUS:25344465222
SN - 0163-1829
VL - 30
SP - 2260
EP - 2262
JO - Physical Review B
JF - Physical Review B
IS - 4
ER -