Abstract
Switching phenomena in amorphous semiconductors have been analyzed in a thermoelectric model. We have been able to obtain current-voltage characteristics from very general mathematical considerations concerning existence, uniqueness, local and global stability, bifurcation, and asymptotic behavior of the non-linear equations for temperature and field. Similar considerations show taht switching proceeds by the nucleation and growth of a hot spot in the interior. Detailed quantitative results are presented for simple models.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 544-551 |
| Number of pages | 8 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 8-10 |
| Issue number | C |
| DOIs | |
| State | Published - Jun 1972 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry